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Design of a high-power multilevel sinusoidal signal and high-frequency excitation module based on fpga for hifu systems

Bui Interdisciplinary Program of Biomedical Mechanical and Electrical Engineering, Pukyong National University, Busan, 48513, South Korea|
Junghwan (55730193800) | Thi Thu Ha (57224006397); Oh | Jaeyeop (57205687978); Vu | Sumin (57216209599); Choi | Duc Tri (57216899888); Park | Tran Thanh Nam (57220025677); Phan | Quoc Cuong (57216899610); Dinh Ohlabs Corporation, Busan, 48513, South Korea| Gebremedhin Yonatan (57224009587); Bui Department of Biomedical Engineering, Pukyong National University, Busan, 48513, South Korea| Thi My Tien (57220036501); Ataklti Department D of Pediatrics at the Hospital for Tropical Diseases, 764 Vo Van Kiet Street, Ward 1, District 5, Ho Chi Minh City, 72708, Viet Nam| Ngoc Thang (57213994140); Nguyen Institute of Engineering, Ho Chi Minh City University of Technology (HUTECH), 475A Dien Bien Phu Street, Ward 25, Binh Thanh District, Ho Chi Minh City, 72308, Viet Nam|

Electronics (Switzerland) Số 11, năm 2021 (Tập 10, trang -)

ISSN: 20799292

ISSN: 20799292

DOI: 10.3390/electronics10111299

Tài liệu thuộc danh mục:

Article

English

Tóm tắt tiếng anh
High-intensity focused ultrasound (HIFU) is a noninvasive therapy that uses focused ultrasound to treat a part of the tissue; high temperatures can damage tissues by heat. HIFU has many applications in the field of surgery and aesthetics and is used increasingly in everyday life. In this article, we discuss the mainboard design that controls the HIFU system with the ability to create a multistep sine wave compatible with many different applications. The signal used to trigger the transducer is a sinusoidal signal with a frequency adjustable from 0.1 to 3 MHz. In addition, the power supplied to the HIFU transducer is also controlled easily by the configuration parameters installed in the control circuit board. The proposed control and design method generates a voltage signal that doubles the supply voltage, thereby reducing the current on the MOSFET. The hardware design is optimized for a surface-mounted device-type MOSFET without the need for an external heat sink. In tests, we conducted a harmonious combination of two output signals to activate the same HIFU probe. The results showed that the energy transferred to the HIFU transducer increased by 1.5 times compared to a single channel. This means that the HIFU treatment time is reduced when using this method, with absolutely no changes in the system structure. � 2021 by the authors. Licensee MDPI, Basel, Switzerland.

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